| PART |
Description |
Maker |
| ARF475LF ARF475FL |
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
From old datasheet system
RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
|
ADPOW
Advanced Power Technology
|
| ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STN2N10L 4585 |
N-Channel Enhancement Mode Power MOS Transistor(Ｎ沟道增强模式功率ＭＯＳ晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMicroelectronics N.V.
ST Microelectronics
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STB60N03L-10 4892 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PC 3C 38#16 PIN RECP
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| 07N70CR-A 07N70CP-A SSM07N70CR-A SSM07N70CP SSM07N |
N Channel Enhancement mode Power MOSFET
N-CHENNEL Enhancement-mode Power MOSFET
|
Silicon Standard
ETC[ETC]
List of Unclassifed Manufacturers
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| AP15P15GI14 AP15P15GI |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
